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26.4.2018 13:00 doc. Krasimira Shtereva,Ph.D.: ZnO thin films: Perspectives & achievements

Srdečně Vás zveme na seminář katedry fyziky ve čtvrtek 26. dubna 2018 od 13:00 h v učebně č.345, na kterém vystoupí se svým sdělením host katedry doc. Krasimira Shtereva,Ph.D. z Department of Electronic, University of Rouse "A.Kanchev", Ruse, Bulgaria.


Anotace:

Zinc oxide (ZnO) is a versatile material which properties enable applications in many areas ranging from electronic/optoelectronic industry to biomedicine and military industry. A ZnO semiconductor is used in transparent electronic devices such as transparent thin film transistor (TTFT) and light-emitting diodes (LED). High conductivity & high transparency ZnO thin films are utilized as transparent electrodes and large area coatings in photovoltaics (PV). ZnO nanoparticles (NPs) are studied for applications in biomedicine due to their antibacterial and anticancer action as well as a sunscreen agent and drug carrier/delivery systems.

Here will be presented some experimental results for ZnO thin films prepared by RF diode sputtering at varying deposition conditions. Thin film parameters were modified via doping with aluminum (ZnO:Al) or nitrogen (ZnO:N), or co-doping with Al/Ga:N (ZnO:Al:N/ZnO:Ga:N thin films). The effects of sputtering conditions (RF power, negative bias voltage, substrate temperature) and the dopant content on structural, electrical and optical properties will be discussed.

| Poslední změna: 24. 04. 2018 | doc. RNDr. Dušan Novotný, CSc. | Informační e-mailVytisknout článekNa začátek stránkyZpět |

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