Srdečně Vás zveme na seminář katedry fyziky ve čtvrtek 26. dubna 2018 od 13:00 h v učebně č.345, na kterém vystoupí se svým sdělením host katedry doc. Krasimira Shtereva,Ph.D. z Department of Electronic, University of Rouse "A.Kanchev", Ruse, Bulgaria.
Zinc oxide (ZnO) is a versatile material which
properties enable applications in many areas ranging from
electronic/optoelectronic industry to biomedicine and military industry. A ZnO
semiconductor is used in transparent electronic devices such as transparent
thin film transistor (TTFT) and light-emitting diodes (LED). High conductivity
& high transparency ZnO thin films are utilized as transparent electrodes
and large area coatings in photovoltaics (PV). ZnO nanoparticles (NPs) are studied
for applications in biomedicine due to their antibacterial and anticancer
action as well as a sunscreen agent and drug carrier/delivery systems.
Here will be presented some experimental results for
ZnO thin films prepared by RF diode sputtering at varying deposition
conditions. Thin film parameters were modified via doping with aluminum
(ZnO:Al) or nitrogen (ZnO:N), or co-doping with Al/Ga:N (ZnO:Al:N/ZnO:Ga:N thin
films). The effects of sputtering conditions (RF power, negative bias voltage,
substrate temperature) and the dopant content on structural, electrical and
optical properties will be discussed.